论文标题
使用阶段变更内存的状态逻辑
Stateful Logic using Phase Change Memory
论文作者
论文摘要
状态逻辑是一种数字处理中的内存技术，可以解决von Neumann存储器瓶颈挑战，同时保持与标准von Neumann架构的向后兼容性。在状态逻辑中，内存单元用于执行逻辑操作，而无需读取或移动内存数组之外的任何数据。以前已经使用几种电阻内存类型（主要是电阻RAM（RRAM））证明了状态逻辑。在这里，我们提出了一种使用不同的电阻内存 - 相变内存（PCM）设计状态逻辑的新方法。我们建议使用常用的PCM材料提出并实验证明四种逻辑门类型（也暗示或NIMP）。由于与RRAM相比，由于PCM的开关机理和功能不同，我们的状态逻辑电路与以前提出的电路不同。由于所提出的状态逻辑形成了功能上完整的集合，因此这些门可以在内存中进行连续执行任何逻辑函数，从而为基于PCM基于PCM的数字处理系统铺平了道路。
Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are used to perform the logic operations without reading or moving any data outside the memory array. Stateful logic has been previously demonstrated using several resistive memory types, mostly by resistive RAM (RRAM). Here we present a new method to design stateful logic using a different resistive memory - phase change memory (PCM). We propose and experimentally demonstrate four logic gate types (NOR, IMPLY, OR, NIMP) using commonly used PCM materials. Our stateful logic circuits are different than previously proposed circuits due to the different switching mechanism and functionality of PCM compared to RRAM. Since the proposed stateful logic form a functionally complete set, these gates enable sequential execution of any logic function within the memory, paving the way to PCM-based digital processing-in-memory systems.
