论文标题
Dirac-ferrimion方法及其在磁性绝缘体多层设计中设计高CHERN数字的应用
A Dirac-fermion approach and its application to design high Chern numbers in magnetic topological insulator multilayers
论文作者
论文摘要
量子异常大厅（QAH）绝缘子宿主托管受拓扑的无手性边缘状态，其数量由其Chern数量确定。到目前为止，QAH状态已在一些磁性拓扑绝缘子中实现，但通常具有较低的Chern数字。在这里，我们开发了一种Dirac-fermion方法，该方法对于理解和设计高分磁性拓扑绝缘子多层中的Chern数字很有价值。基于Dirac-Fermion方法，我们演示了如何通过Farmagentic Mnbi $ _ {2} $ TE $ _ {4} $胶片通过Van der Waals（vdw）Gap调制调制。此外，我们还采用了Dirac-Ferrimion的方法来了解实验观察到的高Chern数字和拓扑相过渡，从Chern Number $ C = 2 $ c = 2 $到$ C = 1 $ [3QL-（BI，SB）$ _ {1.76} $ CR $ _ {0.24} $ TE $ _ {3} $]/[4QL-（BI，SB）$ _ {2} $ _ {2} $ TE $ _ {3} $]多层。我们的工作提供了一种强大的工具，可以在分层磁性绝缘体多层层中使用高Chern编号设计QAH状态。
Quantum anomalous Hall (QAH) insulators host topologically protected dissipationless chiral edge states, the number of which is determined by its Chern number. Up to now, the QAH state has been realized in a few magnetic topological insulators, but usually with a low Chern number. Here, we develop a Dirac-fermion approach which is valuable to understand and design high Chern numbers in various multilayers of layered magnetic topological insulators. Based on the Dirac-fermion approach, we demonstrate how to understand and tune high Chern numbers in ferromagentic MnBi$_{2}$Te$_{4}$ films through the van der Waals (vdW) gap modulation. Further, we also employ the Dirac-fermion approach to understand the experimentally observed high Chern numbers and topological phase transition from the Chern number $C=2$ to $C=1$ in the [3QL-(Bi,Sb)$_{1.76}$Cr$_{0.24}$Te$_{3}$]/[4QL-(Bi,Sb)$_{2}$Te$_{3}$] multilayers. Our work provides a powerful tool to design the QAH states with a high Chern number in layered magnetic topological insulator multilayers.
