论文标题
孔掺杂的铜层中的超流体密度和两分量电导率
Superfluid density and two-component conductivity in hole-doped cuprates
论文作者
论文摘要
伪群占主导地位的孔掺杂层的相位图，将低掺杂的抗铁磁性母体绝缘子连接到较高掺杂的奇怪金属，但其起源和与超导性的关系仍然未知。为了进行，完全了解单个孔（最初位于莫特州）如何变得可移动，并最终在超导穹顶的末端发展成连贯的准粒子。为了影响这一发展，我们检查了孔掺杂的库层的最新运输和光谱研究。在此过程中，我们强调了超流体密度与孔掺杂孔形成的某些正常状态性质之间的一系列经验相关性，这些特性为CUO_2平面内的金属性出现提供了新的见解及其对超导状态的稳健性的影响。我们结论说，最好用两种不同的电流携带流体来理解总体行为，其中只有一种主导超导冷凝物，并在临界孔浓度p^\ ast下散布在伪端端点以下。
While the pseudogap dominates the phase diagram of hole-doped cuprates, connecting the antiferromagnetic parent insulator at low doping to the strange metal at higher doping, its origin and relation to superconductivity remains unknown. In order to proceed, a complete understanding of how the single hole - initially localized in the Mott state - becomes mobile and ultimately evolves into a coherent quasiparticle at the end of the superconducting dome is required. In order to affect this development, we examine recent transport and spectroscopic studies of hole-doped cuprates across their phase diagram. In the process, we highlight a set of empirical correlations between the superfluid density and certain normal state properties of hole-doped cuprates that offer fresh insights into the emergence of metallicity within the CuO_2 plane and its influence on the robustness of the superconducting state. We conclude by arguing that the overall behavior is best understood in terms of two distinct current-carrying fluids, only one of which dominates the superconducting condensate and is gapped out below the pseudogap endpoint at a critical hole concentration p^\ast.
