论文标题
基于单层jacutingaite家庭材料
Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials
论文作者
论文摘要
我们根据单层Jacutingaite家庭材料pt $ _ {2} $ ax $ _ {3} $（a = hg，cd，cd，cd，cd，zn; x = s，x = s，s，se，te），我们可以数值研究范德华（VDW）异质结构中的一般山谷极化和异常霍尔效应。我们对由单层PT $ _ {2} $ ax $ _ {3} $和二维铁磁绝缘子组成的VDW异质结构的原子，电子和拓扑特性进行系统研究。我们表明，四种VDW异质结构表现出Valley极量子异常霍尔阶段，即Pt $ _ {2} $ hgs $ _ {3} $/nibr $ _ {2} $，pt $ _ {2} $ _ {2} pt $ _ {2} $ hgse $ _ {3} $/nibr $ _ {2} $和pt $ _ {2} $ zns $ _ {3} $/cobr $ _ {2} $，最大山谷拆分为134.2 mev in pt $ _ {2} $ hgse $ _ {3} $/nibr $ _ {2} $和pt $ _ {2} $ hgs $ _ {2} $ _ {3} $/nibr $ _ {2} $的58.8 meV的sizable Global Band GAP。我们的发现展示了实施拓扑valleytronics应用程序的理想平台。
We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt$_{2}$AX$_{3}$ (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt$_{2}$AX$_{3}$ and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt$_{2}$HgS$_{3}$/NiBr$_{2}$, Pt$_{2}$HgSe$_{3}$/CoBr$_{2}$, Pt$_{2}$HgSe$_{3}$/NiBr$_{2}$, and Pt$_{2}$ZnS$_{3}$/CoBr$_{2}$, with a maximum valley splitting of 134.2 meV in Pt$_{2}$HgSe$_{3}$/NiBr$_{2}$ and sizable global band gap of 58.8 meV in Pt$_{2}$HgS$_{3}$/NiBr$_{2}$. Our findings demonstrate an ideal platform to implement applications on topological valleytronics.
