论文标题
接近石墨/Inse Schottky光电探测器中的内在阈值故障电压和超高增益
Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector
论文作者
论文摘要
意识到超低击穿电压和超高增益一直是高性能雪崩光电探测器发展的主要挑战之一。在这里，我们报告说，在石墨/Inse Schottky光电探测器中，以击穿电压降至5.5 V，可以实现3*10^5的超高雪崩增益。值得注意的是，可以通过提高操作温度来进一步降低到1.8 v，从而接近1.5ee_g/e e e e e e e e g rese e g ry e。我们开发了二维影响电离模型，并发现在低分解电压下对高增益的观察是由于层次片中电子波（E-PH）散射的降低引起的。我们的发现为开发具有低能消耗和高灵敏度的新型弱光探测器开辟了一个有希望的途径。
Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5E_g/e with E_g the band gap of semiconductor. We develop a two-dimensional impact ionization model and uncover that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon (e-ph) scattering in the layered InSe flake. Our findings open up a promising avenue for developing novel weak-light detectors with low energy consumption and high sensitivity.
