论文标题

高性能非富液液体金属热电材料

High-performance non-Fermi-liquid metallic thermoelectric materials

论文作者

Dong, Zirui, Zhang, Yubo, Luo, Jun, Jiang, Ying, Yu, Zhiyang, Zhao, Nan, Wu, Liusuo, Ruan, Yurong, Zhang, Fang, Guo, Kai, Zhang, Jiye, Zhang, Wenqing

论文摘要

在窄带半导体范式中搜索高性能热电(TE)材料已持续了近70年,并且显然受到一系列研究的阻碍。在这里,我们报告发现了一些金属化合物Taifexcu2x-1sb和Tail1.33SB,显示了超过许多TE半导体的热电器,以及与先进的TE材料相当的无尺寸优点图。还观察到,在低温下,在低温温度下,电阻率的准线性温度(T)依赖性和对数t依赖性电子特异性热与高热电器共存,突显了非纤维纤维 - 液体(NFL)与TE传输的电子量子量的强大耦合。电子结构分析揭示了与Fe-EG相关的局部磁矩,Fe-FE抗铁磁(AFM)相互作用在最接近的4C-4D站点上的相互作用以及两倍变性的EG轨道抗超磁性,在与fermi级别接近fermi级别的情况下,所有这些均与fermi级别的序列相结合,所有这些级别的均均为所有级数补偿以及平行的两通道围绕效应。由于在Heusler Crystal Grattice的等效4C/4D位点随机填充Fe/Cu,这些作用都被结构障碍强烈冥想。磁敏感性偏离了理想的抗铁磁性,但可以很好地拟合x(t)= 1/(θ +btα),似乎与以前讨论的强局部相关性的量子临界场景一致。我们的工作不仅打破了有希望的TE材料应该是大量掺杂的半导体的困境,而且还证明了高性能性能,NFL量子临界性和磁性波动之间的相关性,这为未来的研究打开了新的方向。

Searching for high-performance thermoelectric (TE) materials in the paradigm of narrow-bandgap semiconductors has lasted for nearly 70 years and is obviously hampered by a bottleneck of research now. Here we report on the discovery of a few metallic compounds, TiFexCu2x-1Sb and TiFe1.33Sb, showing the thermopower exceeding many TE semiconductors and the dimensionless figure of merits comparable with the state-of-the-art TE materials. A quasi-linear temperature (T) dependence of electrical resistivity in 2 K - 700 K and the logarithmic T-dependent electronic specific heat at low temperature are also observed to coexist with the high thermopower, highlighting the strong intercoupling of the non-Fermi-liquid (NFL) quantum critical behavior of electrons with TE transports. Electronic structure analysis reveals the existence of fluctuating Fe-eg-related local magnetic moments, Fe-Fe antiferromagnetic (AFM) interaction at the nearest 4c-4d sites, and two-fold degenerate eg orbitals antiferromagnetically coupled with the dual-type itinerant electrons close to the Fermi level, all of which infer to a competition between the AFM ordering and Kondo-like spin compensation as well as a parallel two-channel Kondo effect. These effects are both strongly meditated by the structural disorder due to the random filling of Fe/Cu at the equivalent 4c/4d sites of the Heusler crystal lattice. The magnetic susceptibility deviates from ideal antiferromagnetism but can be fitted well by x(T) = 1/(θ + BTα), seemingly being consistent with the quantum critical scenario of strong local correlation as discussed before. Our work not only breaks the dilemma that the promising TE materials should be heavily-doped semiconductors, but also demonstrates the correlation among high TE performance, NFL quantum criticality, and magnetic fluctuation, which opens up new directions for future research.

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