论文标题
扭曲光子对平面瓦尼尔激子的光激发
Photoexcitation of planar Wannier excitons by twisted photons
论文作者
论文摘要
研究了在薄半导体膜中通过扭曲光子对平面旺尼激子的光激发。得出了激子状态之间过渡概率的显式通用公式。获得了总角动量投影的选择规则。例如，考虑了库仑和rytova-keldysh电子孔相互作用电位。讨论了将平面激子用作纯粹的曲折光子芯片源的使用。获得的公式还描述了与平面半导体中带电杂质的电子和孔的光激发。
Photoexcitation of planar Wannier excitons by twisted photons in thin semiconductor films is investigated. The explicit general formulas for transition probabilities between exciton states are derived. The selection rules for the projection of the total angular momentum are obtained. As examples, the Coulomb and Rytova-Keldysh electron-hole interaction potentials are considered. The use of planar excitons as a pure on-chip source of twisted photons is discussed. The formulas obtained also describe photoexcitation of states of electrons and holes bound to charged impurities in planar semiconductors.
