论文标题
利用电压控制的磁各向异性解决横杆阵列中的偷偷摸摸问题
Leveraging Voltage-Controlled Magnetic Anisotropy to Solve Sneak Path Issues in Crossbar Arrays
论文作者
论文摘要
在用作人工智能硬件的“内存”计算引擎的横梁阵列结构中，写偷偷摸摸的路径问题会导致不希望的设备的切换，从而降低了网络准确性。尽管已经提出了定制的横梁编程方案，但仍在探索跨点设备的非线性切换特性的设备级创新仍在探索中，以提高写入过程的能效。在这项工作中，提出了基于磁性隧道连接（MTJ）的自旋装置设计，该设计利用了使用电压控制的磁各向异性（VCMA）效应的效果，以解决写下偷偷摸摸的路径问题。此外，还提供有关适当的操作电压条件的见解，以保留开关过程中磁化轨迹的稳健性，这对于正确的切换概率操纵至关重要。
In crossbar array structures, which serves as an "In-Memory" compute engine for Artificial Intelligence hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar programming schemes have been proposed, device level innovations leveraging non-linear switching characteristics of the cross-point devices are still under exploration to improve the energy efficiency of the write process. In this work, a spintronic device design based on Magnetic Tunnel Junction (MTJ) exploiting the use of voltage-controlled magnetic anisotropy (VCMA) effect is proposed as a solution to the write sneak path problem. Additionally, insights are provided regarding appropriate operating voltage conditions to preserve the robustness of the magnetization trajectory during switching which is critical for proper switching probability manipulation.
