论文标题
底物表面对自旋涂层生长的宽带隙SNO2薄膜的影响
Effect of Substrate Surface on the Wide Bandgap SnO2 Thin Films Grown by Spin Coating
论文作者
论文摘要
通过应用两个不同的加工条件，已经从SNCL2.2H2O前体溶液中合成了TIN（IV）氧化物（SNO2）溶胶。然后，通过自旋涂层将准备好的溶胶沉积在紫外线处理的石英和苏打石灰玻璃（SLG）底物上。合成的胶片在约100度处被软烘烤。 C.持续10分钟。重复此过程五次以获得紧凑型膜，然后在250度中进行防空。 C.持续2个小时。原始膜和退火膜以UV-VIS-NIR光谱，放牧入射X射线衍射（GIXRD）和场发射扫描电子显微镜（FESEM）为特征。通过测量与去离子（DI）水的接触角来研究底物表面的效果。底物的紫外线处理提供了更干净的表面，以生长均匀的膜。退火薄膜的电阻率是通过使用当前反转技术的四点探针进行的，并在大约范围内发现。 2x10^3至3x10^3 OHM-CM。在大约的范围内发现了薄膜厚度。 137-285 nm，通过手写笔概况仪测量。 UV-VIS-NIR传输数据显示，所有薄膜样品在可见范围内显示出最大（82-89）％的传播。据估计，薄膜的光带隙约为。 3.75-4.00 ev和大约在SLG和石英底物上生长的膜的3.78-4.35 eV。
Tin (IV) oxide (SnO2) sols have been synthesized from SnCl2.2H2O precursor solution by applying two different processing conditions. The prepared sols were then deposited on UV-Ozone treated quartz and soda lime glass (SLG) substrates by spin coating. The as-synthesized film was soft-baked at about 100 deg. C. for 10 min. This process was repeated five times to get a compact film, followed by air-annealing at 250 deg. C. for 2 hours. The pristine and annealed films were characterized by UV-Vis-NIR spectroscopy, Grazing Incident X-Ray Diffraction (GIXRD), and Field Emission Scanning Electron Microscope (FESEM). The effect of the substrate surface was investigated by measuring the contact angles with De-Ionized (DI) water. UV-Ozone treatment of substrate provides a cleaner surface to grow a homogeneous film. The electrical resistivity of annealed thin films was carried out by a four-point-collinear probe employing the current reversal technique and found in the range of approx. 2x10^3 to 3x10^3 Ohm-cm. Film thickness was found in the range of approx. 137-285 nm, measured by a stylus profilometer. UV-VIs-NIR Transmission data revealed that all the thin film samples showed maximum (82-89) % transmission in the visible range. The optical bandgap of the thin films was estimated to be approx. 3.75-4.00 eV and approx. 3.78-4.35 eV for the films grown on SLG and quartz substrates, respectively.
