论文标题
Mn $ _ {0.14} $ bi $ _ {1.86} $ te $ _3 $薄膜
Surface state mediated ferromagnetism in Mn$_{0.14}$Bi$_{1.86}$Te$_3$ thin films
论文作者
论文摘要
可以在Bi $ _ {2} $ te $ _ {3} $薄膜中引起自发的铁磁力矩，这是通过引入Mn掺杂剂的温度t $ \ $ 16 k的。我们证明，通过分子束外延生长的胶片，具有化学计量的Mn $ _ {0.14} $ bi $ $ $ _ {1.86} $ te $ _3 $维持纯Bi $ $ $ _ {2} $ TE $ _ $ _ {3} $的晶体结构。 Mn $ _ {0.14} $ bi $ $ _ {1.86} $ te $ _3 $ crystal导致与卧床的格子不匹配的范德瓦尔的性质，使晶体结构的影响有限（110）。电子传输和磁矩测量结果表明，Mn $ _ {0.14} $ bi $ $ _ {1.86} $ te $ _3 $薄膜的铁磁瞬间增强了，因为费米水平从散装式的导频段和散装型态朝向散装状态，这表明电子表面状态在Mendiatiant of Ferrom中起着重要的作用。 Ferromagnetic Mn $ _ {0.14} $ bi $ _ {1.86} $ te $ _3 $/antantiferromagnetic nif $ _ {2} $ biLayers显示出Mn $ _ {0.14} $ ust $ _ $ _ $ _ {1.86} $ te $ _ {1.86} $ te $ _ {1.86} $ _的富铁磁矩，两个磁层之间的影响。
A spontaneous ferromagnetic moment can be induced in Bi$_{2}$Te$_{3}$ thin films below a temperature T $\approx$ 16 K by the introduction of Mn dopants. We demonstrate that films grown via molecular beam epitaxy with the stoichiometry Mn$_{0.14}$Bi$_{1.86}$Te$_3$ maintain the crystal structure of pure Bi$_{2}$Te$_{3}$. The van der Waals nature of inter-layer forces in the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ crystal causes lattice mismatch with the underlayer to have a limited effect on the resulting crystal structure, as we demonstrate by thin film growth on tetragonal MgF$_{2}$ (110) and NiF$_{2}$ (110). Electronic transport and magnetic moment measurements show that the ferromagnetic moment of the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ thin films is enhanced as the Fermi level moves from the bulk conduction band and towards the bulk band gap, suggesting that electronic surface states play an important role in mediating the ferromagnetic order. Ferromagnetic Mn$_{0.14}$Bi$_{1.86}$Te$_3$/antiferromagnetic NiF$_{2}$ bilayers show evidence that the ferromagnetic moment of the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ film is suppressed, suggesting the existence of an interface effect between the two magnetic layers.
