论文标题
各向同性等离子体 - 热原子层使用sf $ _6 $ plasma和al（ch $ _3 $）$ _ 3 $蚀刻氮化铝
Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF$_6$ plasma and Al(CH$_3$)$_3$
论文作者
论文摘要
我们使用SF $ _6 $等离子体和三甲基铝的顺序暴露（al（ch $ _3 $ _3 $ _ 3 $，TMA），使用SF $ _6 $等离子体和三甲基铝的顺序暴露报告了氮化铝的各向同性血浆原子层蚀刻（ALE）。在大于200 $^\ Circ $ C的温度下观察到ALE，最大蚀刻速率为1.9Å/循环在300 $^\ Circ $ c时观察到，使用Ex-Situ椭圆法测量。啤酒之后，发现蚀刻表面与原始表面相比含有较低的氧气浓度，并表现出$ \ sim 35 $％的表面粗糙度降低。这些发现与ALN在非线性光子学和宽带隙半导体设备中的应用相关。
We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF$_6$ plasma and trimethylaluminum (Al(CH$_3$)$_3$, TMA). ALE was observed at temperatures greater than 200 $^\circ$C, with a maximum etch rate of 1.9 Å/cycle observed at 300 $^\circ$C as measured using ex-situ ellipsometry. After ALE, the etched surface was found to contain a lower concentration of oxygen compared to the original surface and exhibited a $\sim 35$% decrease in surface roughness. These findings have relevance for applications of AlN in nonlinear photonics and wide bandgap semiconductor devices.
