论文标题

一半助母子Zrnipb合金的热电图中的实质性增强

Substantial enhancement in thermoelectric figure-of-merit of half Heusler ZrNiPb alloys

论文作者

Sagar, Amardeep, Bhardwaj, Aman, Novitskii, Andrei, Khovaylo, Vladimir, Patnaik, Satyabrata

论文摘要

三元半助母素合金最近正在进行激烈的研究,以实现高热电图(ZT)。特别令人感兴趣的是基于Zrnipb的半助母(HH)合金,其中通过在PB位点共掺杂SN和BI实现了773 K时ZT = 0.7的最佳值。在这项工作中,我们确定了Zrni1+XPB0.38SN0.6BI0.02(x = 0.03,773 K)复合合金中的优秀ZT。这是通过通过组成调谐方法在HH基质中引入全赫斯勒(FH)的次要相的电子和热性能的协同调制来实现的。这些富含Ni的ZRNI1+XPB0.38SN0.6BI0.02合金是通过弧熔化合成的,然后通过Spark等离子体烧结(SPS)合并。这些合金的特征是XRD和SEM,显示出包含HH基质相和FH次级小相的纳米复合材料的形成。 ZT的增强主要归因于功率因数同步增加,其导热率降低了约25%。还计算了所有样品的热电兼容性因子。最佳性能样品ZRNI1.03PB0.38SN0.6BI0.02的理论上计算的热电设备效率估计为13.6%。我们的结果表明,通过组成调整方法在HH化合物中进行控制的微调将导致新型的外化学计量学HH相具有增强的ZT值,以实现有效的热电设备制造。

Ternary half Heusler alloys are under intense investigations recently towards achieving high thermoelectric figure-of-merit (ZT). Of particular interest is the ZrNiPb based half Heusler (HH) alloy where an optimal value of ZT = 0.7 at 773 K has been achieved by co-doping Sn and Bi at Pb site. In this work, we identify an excellent ZT of 1.3 in ZrNi1+xPb0.38Sn0.6Bi0.02 (x= 0.03, at 773 K) composite alloy. This is achieved by synergistic modulation of electronic as well as thermal properties via introduction of minor phase of full Heusler (FH) in the HH matrix through compositional tuning approach. These Ni-rich ZrNi1+xPb0.38Sn0.6Bi0.02 alloys were synthesized via Arc melting followed by consolidation via Spark Plasma Sintering (SPS). These alloys were characterized by XRD and SEM that shows formation of nanocomposites comprising of HH matrix phase and FH secondary minor phases. Enhancement in ZT is mainly attributed to a synchronized increase in power factor and about 25% decrease in its thermal conductivity. The thermoelectric compatibility factor (S) is also calculated for all samples. The theoretically calculated thermoelectric device efficiency of best performing sample ZrNi1.03Pb0.38Sn0.6Bi0.02 is estimated to be 13.6%. Our results imply that controlled fine tuning in HH compounds through compositional tuning approach would lead to novel off-stoichiometric HH phases with enhanced ZT value for efficient thermoelectric device fabrication.

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