论文标题

在压力下SMB6中相关驱动的表面状态的持久性

Persistence of correlation-driven surface states in SmB6 under pressure

论文作者

Seo, Soonbeom, Luo, Yongkang, Thomas, S. M., Fisk, Z., Erten, O., Riseborough, P. S., Ronning, F., Thompson, J. D., Rosa, P. F. S.

论文摘要

提出的拓扑结束膜绝缘子SMB $ _ {6} $容纳了一个庞大的近杂交间隙,该杂交间隙源于强烈的电子相关性和一个金属表面状态,其有效质量仍然存在争议。热电和扫描隧道光谱测量结果表明,较重的表面状态也源于较强的相关性,而量子振荡和角度分辨光发射测量结果揭示了光有效的质量,这将与表面的围绕围绕碎裂情况保持一致。在这里,我们通过在静水压力下通过电和热电传输测量进行了表面状态的演变,这是一种干净的保留对称性的调谐参数,可抑制近藤间隙,并将SM的价从2.6+增加到3+磁性金属状态。电阻率测量表明,表面载体密度随压力的增加而增加,而热电器测量值显示压力下的费米能不变。结果,随着SM价接近3+的有效质量,随着压力的有效质量会随着压力线性增加。我们的结果与SMB $ _ {6} $中相关驱动的表面状态的存在是一致的,并建议表面近代效应持续到2 GPA的压力下。

The proposed topological Kondo insulator SmB$_{6}$ hosts a bulk Kondo hybridization gap that stems from strong electronic correlations and a metallic surface state whose effective mass remains disputed. Thermopower and scanning tunneling spectroscopy measurements argue for heavy surface states that also stem from strong correlations, whereas quantum oscillation and angle-resolved photoemission measurements reveal light effective masses that would be consistent with a Kondo breakdown scenario at the surface. Here we investigate the evolution of the surface state via electrical and thermoelectric transport measurements under hydrostatic pressure, a clean symmetry-preserving tuning parameter that suppresses the Kondo gap and increases the valence of Sm from 2.6+ towards a 3+ magnetic metallic state. Electrical resistivity measurements reveal that the surface carrier density increases with increasing pressure, whereas thermopower measurements show an unchanged Fermi energy under pressure. As a result, the effective mass of the surface state charge carriers linearly increases with pressure as the Sm valence approaches 3+. Our results are consistent with the presence of correlation-driven surface states in SmB$_{6}$ and suggest that the surface Kondo effect persists under pressure to 2 GPa.

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