论文标题
量子异常的隔热器中的监禁引起的手性边缘通道相互作用
Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators
论文作者
论文摘要
在量子异常大厅（QAH）绝缘子中，内部是绝缘的，但电子可以沿一维导电路径（称为手性边缘通道（CEC））以零电阻传播。预测这些CEC被局限于一维（1D）边缘，并在二维（2D）体积中呈指数衰减。在这项工作中，我们介绍了对不同宽度的大厅杆几何形状制成的QAH设备进行系统研究的结果。在电荷中性点，QAH效应持续存在于宽度约为72 nm的大厅杆装置中，这意味着CEC的内在衰减长度小于〜36 nm。在电子兴奋剂方面，我们发现当样品宽度小于1 um时，霍尔电阻会迅速偏离量化值。我们的理论计算表明，狭窄的QAH样品中量化的霍尔电阻的偏差源于与我们的实验观察结果一致的QAH绝缘子中的两个相反的CEC之间的相互作用。
In quantum anomalous Hall (QAH) insulators, the interior is insulating but electrons can travel with zero resistance along one-dimensional conducting paths known as chiral edge channels (CECs). These CECs have been predicted to be confined to the one-dimensional (1D) edges and exponentially decay in the two-dimensional (2D) bulk. In this work, we present the results of a systematic study of QAH devices fashioned in a Hall bar geometry of different widths. At the charge neutral point, the QAH effect persists in a Hall bar device with a width of only ~72 nm, implying the intrinsic decaying length of CECs is less than ~36 nm. In the electron-doped regime, we find that the Hall resistance deviates quickly from the quantized value when the sample width is less than 1 um. Our theoretical calculations suggest that the deviation from the quantized Hall resistance in narrow QAH samples originates from the interaction between two opposite CECs mediated by disorder-induced bulk states in QAH insulators, consistent with our experimental observations.
