论文标题
BI2SE3/SIO2拓扑绝缘子薄膜的厚度依赖性磁铁传输
Thickness-Dependent Magneto Transport of Bi2Se3/SiO2 Topological Insulator thin films
论文作者
论文摘要
对其表面状态相关的特性进行了大量研究，因为这些材料可用于各种旋转，量子计算和光电子化应用。从这个角度来看，借助热沉积的帮助，硒化薄膜的不同厚度被沉积在250 nm SiO2底物上。这项研究的动机是研究具有不同厚度的表面和大量相关行为。沉积的膜通过Gi-XRD（放牧的X射线衍射仪）和拉曼光谱法进行了表征，从而确保杂质的沉积较少。此外，研究了运输特性，该特性显示了系统中弱反定位效应（WAL）的厚度依赖性，并提出了这些BI2SE3/SIO2薄膜作为拓扑Anderson绝缘子（TAI）。
Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different thicknesses of bismuth selenide thin films are deposited on the 250 nm SiO2 substrate with the help of thermal deposition. The motive of this study is to investigate the surface and bulk-related behaviour with different thicknesses. The deposited films are characterized through GI-XRD (grazing incidence X-ray diffractometer) and Raman spectroscopy, which ensure the impurity less deposition. Further, the transport properties are investigated, which shows thickness dependence of weak anti-localization effect (WAL) in the system and proposed these Bi2Se3/SiO2 thin films as a topological Anderson insulator (TAI).
