论文标题
金属 - 绝缘体过渡附近的无定形Laalo3/srtio3的当前映射
Current Mapping of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition
论文作者
论文摘要
LAALO3和SRTIO3之间发现的二维电子系统具有各种可以通过外部刺激来调节的物理现象。这允许电子设备控制磁性，自旋轨道耦合和超导性。通过不同的供体浓度和使用静电门控来控制电子密度，是修改电子特性的方便手柄，但是对微观尺度（尤其是前者）的影响仍然没有散发出来。在这里，我们使用扫描超导体 - Quantum-interference-device显微镜在无定形的laalo3/srtio3中对电流分布进行成像，同时使用静电传输和氧气退火来改变载体密度。我们展示了潜在的障碍如何影响当接近金属对绝缘体过渡时的几个平行导电通道的均匀2D流程。我们将其与铁弹性结构域和氧空位联系起来。这对载流子密度低的微观和纳米级设备具有重要的后果，并且对氧化物中量子作用的基本研究。
The two-dimensional electron system found between LaAlO3 and SrTiO3 hosts a variety of physical phenomena that can be tuned through external stimuli. This allows for electronic devices controlling magnetism, spin-orbit coupling, and superconductivity. Controlling the electron density by varying donor concentrations and using electrostatic gating are convenient handles to modify the electronic properties, but the impact on the microscopic scale, particularly of the former, remains underexplored. Here, we image the current distribution at 4.2 K in amorphous-LaAlO3/SrTiO3 using scanning superconducting-quantum-interference-device microscopy while changing the carrier density in situ using electrostatic gating and oxygen annealing. We show how potential disorder affects the current and how homogeneous 2D flow evolves into several parallel conducting channels when approaching the metal-to-insulator transition. We link this to ferroelastic domains and oxygen vacancies. This has important consequences for micro- and nanoscale devices with low carrier density and fundamental studies on quantum effects in oxides.
