论文标题
用半导体多振发模型预测激光辐照的钼二硫化物中热区中心光子声子的预测
Prediction of Hot Zone-center Optical Phonons in Laser Irradiated Molybdenum Disulfide with a Semiconductor Multitemperature Model
论文作者
论文摘要
在极化水平下解决声子温度的先前多振体模型（MTM）在激光辐照的石墨烯和金属中不同的声子极化之间发现了显着的非平衡。在这里，我们通过包括电子孔对产生，扩散和重组来开发半导体特异性的MTM（SC-MTM），并表明声子极化级模型不会在激光辐照的molybdenum disulfide（MOS $ _2 $）中产生可观察到的基于极化的非极化的非平衡。相比之下，区域中心光音子和其他模式之间预测明显的非平衡。发现基于动量的非平衡比随着激光斑点的大小和与底物的相互作用而增加。这一发现与在二维光电设备中对能量松弛过程的理解有关，以及对热传输的拉曼测量。
Previous multitemperature model (MTM) resolving phonon temperatures at the polarization level and measurements have uncovered remarkable nonequilibrium among different phonon polarizations in laser irradiated graphene and metals. Here, we develop a semiconductor-specific MTM (SC-MTM) by including electron-hole pair generation, diffusion, and recombination, and show that a phonon polarization-level model does not yield observable polarization-based nonequilibrium in laser-irradiated molybdenum disulfide (MoS$_2$). In contrast, appreciable nonequilibrium is predicted between zone-center optical phonons and the other modes. The momentum-based nonequilibrium ratio is found to increase with decreasing laser spot size and interaction with a substrate. This finding is relevant to the understanding of the energy relaxation process in two-dimensional optoelectronic devices and Raman measurements of thermal transport.
