论文标题
了解超高动力GAAS二维电子系统中机动性的极限
Understanding limits to mobility in ultra-high-mobility GaAs two-dimensional electron systems: The quest for 100 million cm$^2$/Vs and beyond
论文作者
论文摘要
几十年来，超高动力GAAS二维电子系统（2DES）一直是凝结物理学各种研究分支的标志性平台。 GAAS 2DESS成功历史的基础是连续的样本质量改进，这使得宏观长度尺度上的无散射运输以及各种异国情调的多体现象的出现。尽管在这种情况下，分子束外延增长的GAAS 2DES质量的最新突破是值得称赞的，但对阻碍我们阻止我们无法进一步推动移动性限制的最新理解也是及时的。在这里，我们提供的移动性数据在0.3 k的温度下，用于各种最先进的GAAS 2DESS，最大，世界纪录的移动性为$μ\ simeq57 \ times10^6 $ cm $^2 $ /vs，以2DES密度的密度为$ n = 1.55 \ times1010^{11} $ /cm $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2 $^2。我们还提供了可以解释结果的集体散射机制的全面分析。此外，根据我们的研究，我们讨论了可以实现GAAS 2DES的移动性值超过$ 100 \ times10^6 $ cm $^2 $/vs的潜在方案。
For several decades now, ultra-high-mobility GaAs two-dimensional electron systems (2DESs) have served as the hallmark platform for various branches of research in condensed matter physics. Fundamental to this long-standing history of success for GaAs 2DESs was continuous sample quality improvement, which enabled scattering-free transport over macroscopic length scales as well as the emergence of a diverse range of exotic many-body phenomena. While the recent breakthrough in the quality of GaAs 2DESs grown by molecular beam epitaxy is highly commendable in this context, it is also important and timely to establish an up-to-date understanding of what obstructs us from pushing the mobility limit even further. Here, we present mobility data taken at a temperature of 0.3 K for a wide variety of state-of-the-art GaAs 2DESs, exhibiting a maximum, world-record mobility of $μ\simeq57\times10^6$ cm$^2$/Vs at a 2DES density of $n=1.55\times10^{11}$ /cm$^2$. We also provide comprehensive analyses of the collective scattering mechanisms that can explain the results. Furthermore, based on our study, we discuss potential scenarios where GaAs 2DES mobility values exceeding $100\times10^6$ cm$^2$/Vs could be achieved.
