论文标题
高压GAAS雪崩P-N连接二极管中的锁定效果和折叠的双极gunn域
The lock-on effect and collapsing bipolar Gunn domains in high-voltage GaAs avalanche p-n junction diode
论文作者
论文摘要
我们提出了基于实验的证据和基于物理的模拟，对高压GAAS雪崩二极管中的锁定效应。雪崩触发是由施加到二极管和串行中50欧姆负载的陡峭电压坡道引发的。在下纳秒后，雪崩切换后，反向偏置的GAAS二极管在整个施加脉冲的整个持续时间内保持在指导状态（数十个纳米秒）。没有迹象表明，由于非平衡载体的漂移提取，普遍预期在纳秒尺度上发育的P-N结回收率。二极管电压的恒定值约为70 V，远低于400 V的固定击穿电压。数值模拟表明，在狭窄的高视野倒塌的Gunn结构域以及准站点的阴极和阳极电离域中，在狭窄的高场塌陷的Gunn结构域中的影响电离支持了导电状态。由于GAAS中电子的负差异迁移率，崩溃的Gunn结构域自发出现在密集的电子孔血浆中。该效果类似于GAAS大量光电开关的锁定效应，但在通过非光学方法切换的反向偏见的P-N结二极管中观察到。
We present experimental evidence and physics-based simulations of the lock-on effect in high-voltage GaAs avalanche diodes. The avalanche triggering is initiated by steep voltage ramp applied to the diode and in-series 50 Ohm load. After subnanosecond avalanche switching the reversely biased GaAs diode remains in the conducting state for the whole duration of the applied pulse (dozens of nanoseconds). There is no indication of the p-n junction recovery that is commonly expected to develop on the nanosecond scale due to the drift extraction of non-equilibrium carriers. The diode voltage keeps a constant value of ~70 V much lower than the stationary breakdown voltage of 400 V. Numerical simulations reveal that the conducting state is supported by impact ionization in narrow high-field collapsing Gunn domains as well as in quasi-stationary cathode and anode ionizing domains. Collapsing Gunn domains spontaneously appear in the dense electron-hole plasma due to the negative differential mobility of electrons in GaAs. The effect resembles the lock-on effect of GaAs bulk photoconductive switches but is observed in reversely biased p-n junction diode switched by a non-optical method.
