论文标题
网格02立方体检测器中SIPM的轨内辐射损伤表征
In-orbit Radiation Damage Characterization of SiPMs in the GRID-02 CubeSat Detector
论文作者
论文摘要
最近，由于其固态，紧凑的尺寸，低工作电压和对磁场的不敏感性，硅光电塑料（SIPM）已用于多个太空传播任务。但是，空间操作sips会导致辐射损伤和性能降解。有关这些作用的轨数定量研究受到限制。 In this study, we present in-orbit SiPM characterization results obtained by the second detector of the Gamma-Ray Integrated Detectors (GRID-02), which was launched on 6 November 2020. An increase in dark current of $\sim$100 $μ$A/year per SiPM chip (model MicroFJ-60035-TSV) at 28.5 V and 5 $^{\circ}$C was observed.因此，Grid-02检测器的总噪声水平（Sigma）增加了$ \ sim $ 7.5 kev/ate/年。这种增加的估计值为$ \ sim $ 40 $μ$每sipm芯片，以-20 $^{\ circ} $ C，突出了使用冷却系统的积极效果。
Recently, silicon photomultipliers (SiPMs) have been used in several space-borne missions, owing to their solid state, compact size, low operating voltage, and insensitivity to magnetic fields. However, operating SiPMs in space results in radiation damage and degraded performance. In-orbit quantitative studies on these effects are limited. In this study, we present in-orbit SiPM characterization results obtained by the second detector of the Gamma-Ray Integrated Detectors (GRID-02), which was launched on 6 November 2020. An increase in dark current of $\sim$100 $μ$A/year per SiPM chip (model MicroFJ-60035-TSV) at 28.5 V and 5 $^{\circ}$C was observed. Consequently, the overall noise level (sigma) of the GRID-02 detector increased by $\sim$7.5 keV/year. The estimate of this increase is $\sim$40 $μ$A/year per SiPM chip at -20 $^{\circ}$C, highlighting the positive effect of using a cooling system.
