论文标题
双层石墨烯中的栅极定义的电子干涉仪
Gate-defined electron interferometer in bilayer graphene
论文作者
论文摘要
我们提出一个电子干涉仪，仅通过封装的双层石墨烯中的静电门控纯粹定义。这可以最大程度地减少制备量子设备时传统蚀刻方法引入的样品降解。通过观察H/E，H/2E，H/3E和H/4E的时期，可以证明设备质量，目睹了许多微米的相干长度。 AB振荡以及载体类型（电子或孔）与门控无缝调节。从振荡的温度和磁场依赖性分析中，建立了载体的环长和半经典轨迹的相干长度。我们的栅极定义的环几何形状有可能演变成探索相关量子状态的平台，例如扭曲双层石墨烯中干涉仪中的超导性。
We present an electron interferometer defined purely by electrostatic gating in encapsulated bilayer graphene. This minimizes possible sample degradation introduced by conventional etching methods when preparing quantum devices. The device quality is demonstrated by observing Aharonov-Bohm (AB) oscillations with a period of h/e, h/2e, h/3e, and h/4e, witnessing a coherence length of many microns. The AB oscillations as well as the type of carriers (electrons or holes) are seamlessly tunable with gating. The coherence length longer than the ring perimeter and semiclassical trajectory of the carrier are established from the analysis of the temperature and magnetic field dependence of the oscillations. Our gate-defined ring geometry has the potential to evolve into a platform for exploring correlated quantum states such as superconductivity in interferometers in twisted bilayer graphene.
