论文标题
识别MOSFET中的发散有效质量和$^3 $ HE系统
Identifying diverging-effective mass in MOSFET and $^3$He systems
论文作者
论文摘要
诸如神经形态装置和量子的新兴设备可以使用莫特过渡现象，但尤其是，现象的不同机制仍然有待澄清。 The diverging-effective mass near Mott insulators was measured in strongly correlated Mott systems such as a fermion $^3$He and a Si metal-oxide-semiconductor-field-effect transistor, and is closely fitted by the effective mass obtained by the extension of the Brinkman-Rice(BR) picture, $ m^*/m = 1/[1-（u/u_c）^2] = 1/（1-κ^2_ {br}ρ^4）$当$κ^2_^2_ {br} {br} {\ lib} 1（{\ neq} $ 1）乐队填充为$ρ$。它的识别是对Brinkman-Rice图片中恒定质量的渗透。评估了$κ__{br} {\ lot} 0.96 $。
Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass near Mott insulators was measured in strongly correlated Mott systems such as a fermion $^3$He and a Si metal-oxide-semiconductor-field-effect transistor, and is closely fitted by the effective mass obtained by the extension of the Brinkman-Rice(BR) picture, $m^*/m=1/[1-(U/U_c)^2]=1/(1-κ^2_{BR}ρ^4)$ when $κ^2_{BR}{\approx}1({\neq}$1), where $0<U/U_c=κ_{BR}ρ^2<1$, correlation strength is $κ_{BR}$, band-filling is $ρ$. Its identification is a percolation of a constant mass in the Brinkman-Rice picture. Over $κ_{BR}{\approx}0.96$ is evaluated.
