论文标题
大厅电子迁移率在头到头Batio $ _3 $ - 域墙
Large Hall electron mobilities in head-to-head BaTiO$_3$-domain walls
论文作者
论文摘要
在[110]晶体学方向上有目的地设计的头对头（H2H）域壁（DWS）已被提议沿着铁电batio $ _3 $单晶构成单晶体，因为它们是由于其显着的域壁电导率（DWC），因此是新颖的二维电子气体（2DEG）。 Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4-point geometry at room temperature, finding the electron mobility to reach around 400~cm$^2$(Vs)$^{-1}$, while the 2-dimensional charge density amounts to ~7$\times$10$^3$cm$^{-2}$.我们强调了通过评估磁场扫描下的霍尔电阻来考虑热和几何 - 透射率偏移电压，因为在派生的迁移率和电荷密度值中可能会发生较大的巨大误差。除了导电Batio $ _3 $ dw的特定表征外，我们提出该方法是一种简单而快速的方法，以定量地表征铁族传导DWS，这是与以前建议的基于扫描 - 基于扫描 - 基于扫描的霍尔电位分析的补充。
Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4-point geometry at room temperature, finding the electron mobility to reach around 400~cm$^2$(Vs)$^{-1}$, while the 2-dimensional charge density amounts to ~7$\times$10$^3$cm$^{-2}$. We underline the necessity to take account of thermal and geometrical-misalignment offset voltages by evaluating the Hall resistance under magnetic-field sweeps, since otherwise dramatic errors of several hundred percent in the derived mobility and charge density values can occur. Apart from the specific characterization of the conducting BaTiO$_3$ DW, we propose the method as an easy and fast way to quantitatively characterize ferroic conducting DWs, complementary to previously proposed scanning-probe-based Hall-potential analyses.
