论文标题
室温深紫外光发光，来自低维六角硼的氮化硼，使用易于合成制备
Room temperature deep UV photoluminescence from low dimensional hexagonal boron nitride prepared using a facile synthesis
论文作者
论文摘要
低维材料中缺陷水平的评估是量子科学的重要方面。在本文中，我们报告了一种六角硼（H-BN）的便捷合成方法，并评估缺陷及其光发射特性。优化了热退火程序以获得干净的H-BN。 UV-VIS光谱显示出5.28 eV的光能差距，这与报道的剥落，干净的H-BN样品的能量差距相当。 H-BN的优化合成途径产生了两种缺陷，这些缺陷是使用室温光致发光测量值来表征的。该缺陷分别在4.18 eV（在深紫外区域）和3.44 eV（紫外线）处发射光。发射深紫外线（DUV）的缺陷对激发能具有振荡依赖性，而发射3.44 eV光（ZPL3.44 eV）的声子带有平均能量水平分离的声子，在室温下测得的125 MeV。这与具有定期间隔的能量水平的Franck-Condon样结构非常吻合，这是低维H-BN中单个缺陷水平的典型指示。
Evaluation of the defect levels in low-dimensional materials is an important aspect of quantum science. In this article, we report a facile synthesis method of hexagonal boron nitride (h-BN) and evaluate the defects and their light emission characteristics. The thermal annealing procedure is optimized to obtain clean h-BN. The UV-Vis spectroscopy shows the optical energy gap of 5.28 eV which is comparable to the reported energy gap for exfoliated, clean h-BN samples. The optimized synthesis route of h-BN has generated two kinds of defects which are characterised using room temperature photoluminescence measurements. The defects emit light at 4.18 eV (in deep ultraviolet region) and 3.44 eV (ultraviolet), respectively. The defect emitting deep ultraviolet (DUV) has oscillatory dependency on the excitation energy, while that emitting 3.44 eV light (ZPL3.44 eV) has a phonon bands with mean energy level separation of 125 meV measured at room temperature. This agrees very well with the Franck-Condon-like structure having regularly spaced energy levels, which are typical indications of single defect levels in the low dimensional h-BN.
