论文标题
近场热流的纠正的基本限制：内在半导体膜的潜力
Fundamental limit to the rectification of near-field heat flow: The potential of intrinsic semiconductor films
论文作者
论文摘要
我们将基本限制得出了由固有半导体膜介导的近场辐射热整流，在波动电动力学的框架内。通过利用状态的电磁局部密度，我们将ε“ _H/ε” _l识别为矫正幅度上的上限，其中ε“ _H和ε” _l分别是高温和低温下膜介绍性的想象部分。这种界限是紧密的，无论电影是被暂停还是支持，都可以接近。对于固有的硅原理可以超过10^9。我们的工作强调了像电流一样有效控制热流的可能性，并提供了实现这一目标的准则。
We derive the fundamental limit to near-field radiative thermal rectification mediated by an intrinsic semiconductor film within the framework of fluctuational electrodynamics. By leveraging the electromagnetic local density of states, we identify ε"_H/ε"_L as an upper bound on the rectification magnitude, where ε"_H and ε"_L are respectively the imaginary parts of the film permittivity at high and low temperatures. This bound is tight and can be approached regardless of whether the film is suspended or supported. For intrinsic silicon the limit can in principle exceed 10^9. Our work highlights the possibility of controlling heat flow as effectively as electric current, and offers guidelines to potentially achieve this goal.
