论文标题
抑制铁磁性和疾病的影响在硅取代的CERH6GE4中
Suppression of ferromagnetism and influence of disorder in silicon-substituted CeRh6Ge4
论文作者
论文摘要
我们报告了在最近发现的量子关键的Ferromagnet cerh $ _6 $ ge $ _4 $中对等电子化学替代的研究。硅掺杂后，CERH $ _6 $的铁磁订购温度（ge $ _ {1-x} $ si $ _x $）$ _ 4 $被不断抑制，并且没有观察到超过$ x_c $$ \ x_c $$ \ $ 0.125的过渡。 $ c/t \ propto $ log（$ t^*/t $）的非fermi液体行为接近$ x_c $，表明存在强量子波动，而$ t $线性的行为在压压下对父母的抗速度的压力不存在，这似乎是由硅酸脂溶液引起的疾病的结果。我们的发现为CERH $ _6 $ ge $ _4 $中的异常铁磁量子临界性扮演的作用提供了证据，并为理解这种行为的起源提供了进一步的证据。
We report a study of isoelectronic chemical substitution in the recently discovered quantum critical ferromagnet CeRh$_6$Ge$_4$. Upon silicon-doping, the ferromagnetic ordering temperature of CeRh$_6$(Ge$_{1-x}$Si$_x$)$_4$ is continuously suppressed, and no transition is observed beyond $x_c$$\approx$0.125. Non-Fermi liquid behavior with $C/T \propto$log($T^*/T$) is observed close to $x_c$, indicating the existence of strong quantum fluctuations, while the $T$-linear behavior observed upon pressurizing the parent compound is absent in the resistivity, which appears to be a consequence of the disorder induced by silicon doping. Our findings provide evidence for the role played by disorder on the unusual ferromagnetic quantum criticality in CeRh$_6$Ge$_4$, and provides further evidence for understanding the origin of this behavior.
