论文标题
通过拉伸GAAS纳米线阵列的第二谐音一代调整
Second-harmonic generation tuning by stretching arrays of GaAs nanowires
论文作者
论文摘要
我们在柔性聚合物中提出了带有III-V纳米线的可穿戴设备，该设备用于第二次谐波生成强度的主动机械调整。一系列垂直GAAS纳米线的阵列用金属有机蒸气相外观生长，然后嵌入聚二甲基硅氧烷中，并用机械剥离从刚性底物脱离。实验结果表明，第二次谐波生成强度的可调节性为30％拉伸的两倍，这与模拟相匹配，包括大小的分布。我们研究了不同参数对频带分散和可调性的影响，例如音高，长度和直径。我们预测纳米线阵列的非线性信号强度的至少三个数量级的主动机械调谐。阵列的灵活性以及共振的波长工程使得这样的结构透视平台，可作为未来的可弯曲或可伸缩的纳米光子设备作为光源或传感器。
We present a wearable device with III-V nanowires in a flexible polymer, which is used for active mechanical tuning of the second-harmonic generation intensity. An array of vertical GaAs nanowires was grown with metalorganic vapour-phase epitaxy, then embedded in polydimethylsiloxane and detached from the rigid substrate with mechanical peel off. Experimental results show a tunability of the second-harmonic generation intensity by a factor of two for 30% stretching which matches the simulations including the distribution of sizes. We studied the impact of different parameters on the band dispersion and tunability of the second-harmonic generation, such as the pitch, the length, and the diameter. We predict at least three orders of magnitude active mechanical tuning of the nonlinear signal intensity for nanowire arrays. The flexibility of the array together with the resonant wavelength engineering make such structures perspective platforms for future bendable or stretchable nanophotonic devices as light sources or sensors.
