论文标题
Topmetal-M：一种用于紧凑跟踪应用的新型像素传感器
Topmetal-M: a novel pixel sensor for compact tracking applications
论文作者
论文摘要
Topmetal-M是一个大面积像素传感器（18毫米 * 23毫米），该原型在2019年在新的130 nm高抗性CMOS工艺中制造的原型。它包含400行 * 512列平方像素，其音高为40μm。在Topetal-M中，首次提出了一种梳理单片活跃像素传感器（MAP）和Topmetal传感器的新型电荷收集方法。粒子沉积在传感器中和沿传感器上的轨道上的电离电荷都可以收集。像素内电路主要由低噪声电荷敏感放大器组成，以建立能量重建的信号，以及带有时间到振幅转换器（TAC）的鉴别器，用于到达时间（TOA）测量时间。通过这种机制，可以测量粒子的轨迹，颗粒命中位置，能量和到达时间。通过在整个像素阵列上进行的时分复访问每个像素的模拟信号。本文将讨论Topmetal-M传感器的设计和初步测试结果。
The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 μm. In Topmetal-M, a novel charge collection method combing the Monolithic Active Pixel Sensor (MAPS) and the Topmetal sensor has been proposed for the first time. Both the ionized charge deposited by the particle in the sensor and along the track over the sensor can be collected. The in-pixel circuit mainly consists of a low-noise charge sensitive amplifier to establish the signal for the energy reconstruction, and a discriminator with a Time-to-Amplitude Converter (TAC) for the Time of Arrival (TOA) measurement. With this mechanism, the trajectory, particle hit position, energy and arrival time of the particle can be measured. The analog signal from each pixel is accessible through time-shared multiplexing over the entire pixel array. This paper will discuss the design and preliminary test results of the Topmetal-M sensor.
