论文标题
基于中心对称电极和任意方向电场的电晶晶体的半波电压调节方法
A half-wave voltage regulation method of electro-optic crystal based on center-symmetric electrodes and arbitrary direction electric field
论文作者
论文摘要
为了解决光电压传感器(OVS)电压分配培养基的不稳定性和热应力双折射的问题,在本文中提出了基于中央对称电极的半波电压调节方法和任意方向性电场。该方法使用中心对称的铜箔电极或ITO(Indium Tin氧化物)透明电极来施加电压,该电压可以任意调整晶体中平均电场的方向,以便在没有其他Sf6 Gasz Gastz Gastz Gastz Gastz Gastz Gastz Gastz Glass blimuthate(Bi4Ge3O12,或BGO)晶体的半波电压上提高半波电压。 BGO晶体的内部电场通过有限元法模拟,半波电压是通过电效应的耦合波理论计算得出的。结果表明,考虑到1°角的最大调节半波电压可以达到2.67E3 kV。这与实验结果1.72E3 kV一致,差异为35.6%。为了测量110kV线电压,即63.5kV相电压,以确保0.2精度类别,入射光的角度误差以及极化方向和电场方向小于3.9',这可以由现有技术实现。
To solve the problems of instability and thermal stress birefringence of voltage divided medium in optical voltage sensor (OVS), a half-wave voltage regulation method based on a central symmetry electrode and an arbitrary directional electric field is proposed in this paper. The method uses a center-symmetric copper foil electrode or the ITO (Indium Tin Oxide) transparent electrode to apply voltage, which can arbitrarily adjust the direction of the average electric field in the crystal, so as to improve the half-wave voltage of the bismuth germanate (Bi4Ge3O12, or BGO) crystal directly without additional SF6 gas or quartz glass. The internal electric field of the BGO crystal is simulated by the finite element method, and the half-wave voltage is calculated by the coupling wave theory of electro-optic effect. The results show that the maximum regulated half-wave voltage, considering the 1° angle, can reach 2.67e3 kV. And this is consistent to the experimental results 1.72e3 kV with difference of 35.6%. For the measurement of 110kV line voltage, that is, 63.5kV phase voltage, to ensure a 0.2 accuracy class, the angle error of incident light, and the polarization direction and the electric field direction is required to be less than 3.9', which can be achieved by the existing technologies.