论文标题
R-和H型Twisted Mose2/WSE2异质结构的直接STM测量
Direct STM Measurements of R- and H-type Twisted MoSe2/WSe2 Heterostructures
论文作者
论文摘要
当半导体过渡金属二分元元素化时，异质结构被堆叠在一起时，扭曲角度和格子不匹配会导致周期性的Moiré电位。随着层之间的角度的变化，电子特性也会发生变化。随着角度接近0-或60度的有趣特征和特性，例如频带边缘中的调制，平面带和限制会发生。在这里，我们报告了扫描隧道显微镜和光谱测量在带有接近0度旋转（R-Type）和接近60度旋转（H型）（H型）的Mose2/WSE2异质结构中的带隙和频带调制上的光谱测量值。我们发现，与理论预测的H-type相比，R-type的调制构型的调制是对两种堆叠配置的调制。此外，状态图像的局部密度表明，电子在价带和传导带边缘的位置不同。
When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moiré potential. As the angle between the layers changes, so do the electronic properties. As the angle approaches 0- or 60-degrees interesting characteristics and properties such as modulations in the band edges, flat bands, and confinement are predicted to occur. Here we report scanning tunneling microscopy and spectroscopy measurements on the band gaps and band modulations in MoSe2/WSe2 heterostructures with near 0 degree rotation (R-type) and near 60 degree rotation (H-type). We find a modulation of the band gap for both stacking configurations with a larger modulation for R-type than for H-type as predicted by theory. Furthermore, local density of states images show that electrons are localized differently at the valence band and conduction band edges.
