论文标题
Dirac节点工程和掺杂的狄拉克材料中的扁平带
Dirac node engineering and flat bands in doped Dirac materials
论文作者
论文摘要
我们建议使用杂质带工程的尝试的方法来生产扁平材料中的扁平带和其他节点。我们表明，表面杂质会产生几乎平坦的杂质带，靠近Dirac Point。 Dirac节点状态的杂交引起了表面乳糖节点的分裂，并在布里渊区的高对称点上出现新节点。结果是可靠的，而不是模型依赖性的：紧密结合的计算由拓扑绝缘体表面状态的低能有效模型与杂质带杂交。最后，我们解决了杂质部位上局部电子之间电子电子相互作用的影响。我们确认相关效应在产生带杂交和围绕效应的同时保持杂交带平均。我们的发现为掺杂的狄拉克材料中的结构和平面相关的相位的杂质带工程开辟了前景。
We suggest the tried approach of impurity band engineering to produce flat bands and additional nodes in Dirac materials. We show that surface impurities give rise to nearly flat impurity bands close to the Dirac point. The hybridization of the Dirac nodal state induces the splitting of the surface Dirac nodes and the appearance of new nodes at high-symmetry points of the Brillouin zone. The results are robust and not model dependent: the tight-binding calculations are supported by a low-energy effective model of a topological insulator surface state hybridized with an impurity band. Finally, we address the effects of electron-electron interactions between localized electrons on the impurity site. We confirm that the correlation effects, while producing band hybridization and Kondo effect, keep the hybridized band flat. Our findings open up prospects for impurity band engineering of nodal structures and flat-band correlated phases in doped Dirac materials.
