论文标题
等离子辅助放电并在EUV诱导的血浆中充电
Plasma-assisted Discharges and Charging in EUV-induced Plasma
论文作者
论文摘要
在过去的几年中，EUV光刻扫描仪系统已经进入了最先进的集成电路（IC）的大批量制造，临界尺寸降至10 nm。该技术使用13.5 nm的EUV辐射，该辐射通过接近Vacuum H2背景气体传输，将标线模式成像到晶圆上。能量的EUV光子将背景气体激发到低密度H2血浆中。所得的等离子体将在局部将近空白变成导电介质，并且可以为浮动表面和颗粒充电，也可以远离直接的EUV梁。本文将通过建模和实验讨论EUV诱导的血浆和静电之间的相互作用。我们表明，EUV诱导的血浆可以触发远低于经典帕申极限的排放。此外，我们证明了EUV血浆对两个颗粒和表面的充电效应。不受控制，这可能会导致标线背面以及颗粒的产生和运输的高电压。我们展示了一个特殊的卸载序列，用于使用EUV诱导的等离子体来积极解决充电和缺陷挑战。
In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is transmitted through a near-vacuum H2 background gas, imaging the pattern of a reticle onto a wafer. The energetic EUV photons excite the background gas into a low-density H2 plasma. The resulting plasma will locally change the near-vacuum into a conducting medium, and can charge floating surfaces and particles, also away from the direct EUV beam. This paper will discuss the interaction between EUV-induced plasma and electrostatics, by modeling and experiments. We show that the EUV-induced plasma can trigger discharges well below the classical Paschen limit. Furthermore, we demonstrate the charging effect of the EUV plasma on both particles and surfaces. Uncontrolled, this can lead to unacceptably high voltages on the reticle backside and the generation and transport of particles. We demonstrate a special unloading sequence to use the EUV-induced plasma to actively solve the charging and defectivity challenges.
