论文标题
生长中断对GA（AS，SB）II型异质结构的发光特性的影响
The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures
论文作者
论文摘要
通过连续波和时间分辨出的II型GA（AS，SB）/GAAS/（GA，GA，IN）作为双量子量子井结构中，通过连续波和时间分辨的光致发光光谱研究，研究了生长中断对GA（AS，SB）/GAAS界面的发光特性的影响。一种与原子力显微镜（AFM）结合使用的特定高度选择性蚀刻技术用于分析GA（AS，SB）界面层的形态。 II型电荷转移重组已被用作敏感探针。已经发现，使用10s生长中断可以使用两个前体源来实现稳定源，从而实现最高的发光量子效率。
The influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface have been studied by continous wave and time resolved photoluminescence spectrosocopy in type II Ga(As,Sb)/GaAs/(Ga,In)As double quantum well structures. A specific highly selective etching technique in combination with atomic force microscopy (AFM) is used to analyse the morphology of the Ga(As,Sb) interface layers. The type II charge transfer recombination has been used as sensitive probe. It was found, that highest luminescence quantum efficiency can be achieved using a 10s growth interruption applying a stabilization using both precursor sources for the anion sublattice.
