论文标题
在拓扑半学中，量子限制大厅效应具有较大的载体密度
Quantum-limit Hall effect with large carrier density in topological semimetals
论文作者
论文摘要
$ν= nh/eb \ sim o（1）$的量子限制厅效应托有各种异国情调的量子现象，需要要求强磁场$ b $和低载体密度$ n $。我们建议即使在存在大型载流子密度残基$ n_e $和$ n_h $的情况下，相对于磁场$ b $的拓扑半学分，即使存在量子限制的大厅的效果，在拓扑半学中，单个费米的表面轮廓允许电子型和孔型载体和孔型载体和进近的中性性和中性含量为$ n_e \ n_e \ sim n_h_h $。基础填充因子$ν= | n_e-n_h | h/eb $显式违反了量子振荡的关系。
The quantum-limit Hall effect at $ν= nh/eB\sim O(1)$ that hosts a variety of exotic quantum phenomena requires demanding strong magnetic field $B$ and low carrier density $n$. We propose to realize quantum-limit Hall effect even in the presence of large carrier density residues $n_e$ and $n_h$ relative to the magnetic field $B$ in topological semimetals, where a single Fermi surface contour allow both electron-type and hole-type carriers and approaches charge neutrality as $n_e\sim n_h$. The underlying filling factor $ν= |n_e-n_h|h/eB$ explicitly violates the Onsager's relation for quantum oscillations.
