论文标题
ALD Al2O3表面钝化在P型Cu2O薄膜晶体管的性能中的作用
Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors
论文作者
论文摘要
高性能P型氧化物薄膜晶体管（TFTS）对于许多半导体应用具有很大的潜力。但是，这些设备通常会遭受低洞的迁移率和高状态电流的影响。我们用原子层沉积（ALD）生长的相岩多晶Cu2O半导体通道制造了P型TFT。通过在Cu2O通道上应用薄ALD ALD AL2O3钝化层，可以改善TFT开关特性，然后在300C处进行真空退火。通过TEM-EDX和XPS进行详细的表征，表明Cu2O的表面在AL2O3沉积后减少并表明形成1-2 nm厚的cualo2 Interfacial层。这是由ALD AL2O3的高负固定电荷引起的现场效应钝化，通过降低深陷阱状态的密度以及通过减少设备外部设备中半导体层中电气的积累来改善TFT性能。
High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a thin ALD Al2O3 passivation layer on the Cu2O channel, followed by vacuum annealing at 300 C. Detailed characterisation by TEM-EDX and XPS shows that the surface of Cu2O is reduced following Al2O3 deposition and indicates the formation of 1-2 nm thick CuAlO2 interfacial layer. This, together with field-effect passivation caused by the high negative fixed charge of the ALD Al2O3, leads to an improvement in the TFT performance by reducing the density of deep trap states as well as by reducing the accumulation of electrons in the semiconducting layer in the device off-state.
