论文标题
超导sn $ _ {1-x} $ in $ _x $ te薄膜的分子束外延
Molecular beam epitaxy of superconducting Sn$_{1-x}$In$_x$Te thin films
论文作者
论文摘要
我们报告了一项有关$ _x $ _x $ te薄膜的Sn $ _ {1-x} $的生长条件的系统研究，分子束外延，以最大化超导过渡温度$ t_ \ mathrm {c} $。仔细调整SN，IN和TE的通量比，使我们能够在单个阶段中找到最佳的条件（$ x $ = 0.66）在SN $ _ {1-x} $的单个阶段中，$ _x $ in $ _x $ te以外的散装式限制限制（$ x $ x $ = 0.5）。 $ t_ \ mathrm {c} $显示圆顶形的依赖性$ x $，最高$ t_ \ mathrm {c} $ = 4.20 k，$ x $ = 0.55，与散装晶体报告的一致。 $ _x $ te电影中良好调节的sn $ _ {1-x} $可以通过将它们集成到最新的交界器和/或邻近耦合设备中来研究可能的拓扑超导性。
We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x$ = 0.66) into Sn site in a single phase of Sn$_{1-x}$In$_x$Te beyond the bulk solubility limit at ambient pressure ($x$ = 0.5). $T_\mathrm{c}$ shows a dome-shaped dependence on In content $x$ with the highest $T_\mathrm{c}$ = 4.20 K at $x$ = 0.55, being consistent to that reported for bulk crystals. The well-regulated Sn$_{1-x}$In$_x$Te films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.
