论文标题
钻石中间接激子的扩散相关寿命
Diffusion-related lifetime of indirect excitons in diamond
论文作者
论文摘要
我们研究了通过化学蒸气沉积法生长的极高纯度钻石中间接激子的寿命。由于有效没有杂质陷阱，使用双重陷阱评估的生命周期和小应变（幅度$ <$ 10 $^{ - 4} $）之间存在明显的相关性。提出了一种表面重组模型，该模型是为了解释温度依赖性寿命而扩展了由于激子扩散而导致的非辐射重组。基于衍生的辐射寿命，我们的模型可以在任何温度以及钻石中具有最高可实现的内部量子效率在任何温度和最高可实现的内部量子效率上进行预测，钻石通常适用于具有高激子结合能的广泛材料。
We investigate the lifetime of indirect excitons in extremely high purity diamond grown by the chemical vapor deposition method. A clear correlation is found between the lifetime and small strain (magnitude $< $10$^{-4}$) assessed using birefringence, thanks to the effective absence of impurity traps. A surface recombination model, extended for nonradiative recombination at dislocations due to exciton diffusion, is proposed to explain the temperature-dependent lifetime. Based on the derived radiative lifetime, our model enables the prediction of lifetimes at any temperature as well as the highest achievable internal quantum efficiency of exciton luminescence in diamond, which can generally be applicable to a wide range of materials with high exciton binding energies.
