论文标题
在硅纳米线中的可重构双极量子点的分散读数
Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
论文作者
论文摘要
我们报告了使用定制的互补金属氧化物 - 氧化物 - 高导体（CMOS）工艺制造的硅（SOI）纳米线上的硅栅极定义的量子点。双极性是通过将栅极延伸到固有的硅通道上的高度掺杂的N型和P型末端来实现的。我们利用能够向硅通道提供双极载波载体储藏室的能力，以证明具有相同电极重新配置的能力，该电极用相同的电极用孔或电子重新定义双量子点。我们使用基于栅极的反射仪来感知电子和孔双量子点的点间电荷过渡（IDT），从而达到了电子（100）$μ$ S的最小整合时间（孔）。我们的结果提供了在单个设备中将电子旋转的长相干时间与硅中的电孔旋转相结合的机会。
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon.
