论文标题
在α-SN/INSB异质结构中观察到的大磁倍率
Large magnetoresistance observed in α-Sn/InSb heterostructures
论文作者
论文摘要
在这项研究中，我们报告了通过分子束外延（MBE）在INSB底物上的一系列α-SN膜的外延生长，厚度从10 nm到400 nm不等。确认了α-SN膜的高品质。与裸露的INSB底物相比，已经观察到超过450,000％的大磁磁性（MR）。厚度，角度和温度依赖性MR用于证明α-SN膜对电运输特性的影响。
In this study, we report the epitaxial growth of a series of α-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the α-Sn films are confirmed. An enhanced large magnetoresistance (MR) over 450,000% has been observed compared to that of the bare InSb substrate. Thickness, angle and temperature dependent MR are used to demonstrate the effects of α-Sn films on the electrical transport properties.
