论文标题
纳米级洞察力对极高的高温反向偏置应力后，对电源MOSFET的起源分解的洞察力
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
论文作者
论文摘要
在这项工作中，研究了4H-SIC功率MOSFET的介电击穿的起源，该纳米级是在纳米级的，分析了在极长（三个月）的高温反向偏置（HTRB）应力后发生故障的设备。发现分解事件的位置与通过外延层传播的螺纹位错之间一对一的对应关系。扫描探针显微镜（SPM）揭示了螺纹位错的导电性质和少数载体浓度的局部修饰。基于这些结果，可以阐明螺纹错位对4H-SIC MOSFET失败的作用。
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified.
