论文标题
高速写入特性在旋转轨道扭矩内磁场设备中的外部磁场上的依赖性
Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices
论文作者
论文摘要
旋转轨道扭矩（SOT）磁度（MR）设备吸引了用于下一代MR设备的注意力。已知SOT设备根据自由层的磁化方向与写入方向之间的相对角度表现出不同的写入属性。但是，很少有研究比较每种类型的写入特性的研究。在这项研究中，我们使用两种平面磁化SOT-MR设备测量了阈值写电流密度和写电流切换概率的外部垂直磁场依赖性。
Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization direction of the free layer and the write-current direction. However, few studies that compare the write properties of each type have been reported. In this study, we measured the external perpendicular-magnetic field dependence of the threshold write current density and the write current switching probability using two types of in-plane magnetization SOT-MR devices.
