论文标题

假金属,真实绝缘子和变性的损失金属

False metals, real insulators, and degenerate gapped metals

论文作者

Malyi, Oleksandr I., Zunger, Alex

论文摘要

本文介绍了由简单的电子结构理论预测的重要化合物家族,即金属,但实际上是绝缘子。传统上,这种错误的金属状态在文献中归因于电子电子相关性(“莫特绝缘子”)的不正确处理,而实际上,即使是毫无限制在简单的理论上构成限制,也可以正确地描述绝缘阶段。这种不必要的限制包括本文中描述的不同形式的不允许对称破坏。由于导体的科学和技术已经从研究简单的元素金属(例如Al或Cu)转变为复合导体,例如二元或三元氧化物和pnictides,因此已经注意到了一种特殊的脱位但间隙金属。他们假定的电子配置显示了传统带或价带内的费米水平,但是主要带边缘之间有一个“内部频带差距”。该电子配置的重要性是,当这种状态的形成成本要比通过将载体从传导带转移到这些较低的能量受体状态而获得的能量的能量要少于内部带隙内部状态的形成可能是不稳定的,从而将原始金属(假)金属转移到绝缘子。

This paper deals with a significant family of compounds predicted by simplistic electronic structure theory to be metals but are, in fact, insulators. This false metallic state has been traditionally attributed in the literature to reflect the absence of proper treatment of electron-electron correlation ("Mott insulators") whereas, in fact, even mean-field like density functional theory describes the insulating phase correctly if the restrictions posed on the simplistic theory are avoided. Such unwarranted restrictions included different forms of disallowing symmetry breaking described in this article. As science and technology of conductors have transitioned from studying simple elemental metals such as Al or Cu to compound conductors such as binary or ternary oxides and pnictides, a special class of degenerate but gapped metals has been noticed. Their presumed electronic configurations show the Fermi level inside the conduction band or valence band, yet there is an "internal band gap" between the principal band edges. The significance of this electronic configuration is that it might be unstable towards the formation of states inside the internal band gap when the formation of such states costs less energy than the energy gained by transferring carriers from the conduction band to these lower energy acceptor states, changing the original (false) metal to an insulator.

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