论文标题
通过He $^+$ ion iradiation调整Dzyaloshinskii-Moriya的互动
Tuning of the Dzyaloshinskii-Moriya Interaction by He$^+$ ion irradiation
论文作者
论文摘要
我们研究了He $^+$ iradiation对ta/co20fe60b20/pt/mgo样品中Dzyaloshinskii-Moriya互动（DMI）的影响。我们发现，使用40 keV He $^+$离子的辐射增加了大约20％的通电率，最高可达2 $ \ cdot $ 10 $ \ rm {^{16}} $ $ $ \ rm {ions/cm}^2 $，然后降低更高的平均值。相反，界面各向异性显示出明显不同的通量依赖性。为了更好地理解离子辐照对与CO20FE60B20层TA和PT接口的影响，我们进行了蒙特卡罗模拟，该模拟显示了界面处的疾病的预期增加。疾病的适度增加可以增加三个站点交换机制的三胞胎总数，因此可以增加DMI。我们的结果表明，DMI可以在纳米尺度上进行本地设计，从而提供了一种高度有希望的方法来推动基于天际的记忆。
We studied the impact of He$^+$ irradiation on the Dzyaloshinskii-Moriya interaction (DMI) in Ta/Co20Fe60B20/Pt/MgO samples. We found that irradiation with of 40 keV He$^+$ ions increases DMI by approximately 20% for fluences up to 2$\cdot$10$\rm{^{16}}$ $\rm{ions/cm}^2$ before it decreases for higher fluence values. In contrast, the interfacial anisotropy shows a distinctly different fluence dependence. To better understand the impact of the ion irradiation on the Ta and Pt interfaces with the Co20Fe60B20 layer, we carried out Monte-Carlo simulations, which showed an expected increase of disorder at the interfaces. A moderate increase in disorder can increase the total number of triplets for the three-site exchange mechanism and can consequently increase the DMI. Our results demonstrate that the DMI can be locally engineered at the nanometer scale, providing a highly promising approach to advance skyrmion-based memories.
