论文标题
单层和几层磁性半导体CRPS4的结构和光学特性
Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4
论文作者
论文摘要
原子上薄的二元二维(2D)半导体取决于其组成,结构和厚度,表现出不同的物理特性。通过在这些材料中添加另一个元素,这将导致三元2D材料的形成,该属性和结构将大大变化,并且可以探索大大扩展的应用程序。在这项工作中,我们报告了硫代磷酸铬(CRPS4)的结构和光学特性,这是一种三元抗磁性半导体。它的结构细节通过X射线和电子衍射揭示。透射电子显微镜表明,优先切换的边缘与对角线CR原子行平行,这很容易鉴定出它们的晶体学取向。强大的面内光学各向异性诱导的双折射也可以有效地确定晶体学取向。首次通过拉曼光谱探测了晶格振动,并表现出对晶体厚度的显着依赖,从而将其剥落至单层。由反射率对比确定的光吸收由位于CR3+离子定位的D-D类型转变主导,这也是1.31 eV处的主要光致发光峰。吸收和发射光谱中的光谱特征表现出明显的厚度依赖性,并暗示了单层CRPS4的高光化学活性。当前的结构和光学研究将为这款新型磁性半导体的未来研究和应用提供牢固的基础。
Atomically thin binary 2-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure and thickness. By adding another element in those materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffractions. Transmission electron microscopy showed that preferentially-cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy for the first time and exhibited significant dependence on thickness of crystals exfoliated down to single layer. Optical absorption determined by reflectance contrast was dominated by d-d type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness-dependence and hinted a high photochemical activity for single layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this novel magnetic semiconductor.