论文标题
山谷选择性的浮雕Chern平坦乐队中的多层石墨烯
Valley-selective Floquet Chern Flat Bands in Twisted Multilayer Graphene
论文作者
论文摘要
我们表明，具有圆两极光（CPL）的Floquet Engineering可以选择性地将扭曲的多层石墨烯（TMG）的山谷变性分开，从而生成一个受控的Valley Polarquet Chern Chern Floquet Floquet Chern Flat Band带有可调大的Chern号。它提供了一种可行的光学方法，可以操纵莫伊尔平乐队的自由度，从而为研究Morié平面系统系统的山谷制作提供了新的机会。因此，我们期望TMG的许多与山谷相关的特性，例如轨道铁磁性可以通过CPL进行适当的掺杂而切换。我们在通用（m+n） - 莱格TMG中揭示了floquet平面频段的Chern数字层次结构规则。我们还说明，CPL对TMG的影响强烈依赖于堆叠手性，这是TMG的独特特征。所有这些现象都可以在扭曲的双重双层石墨烯系统中进行测试，这是TMG的最简单例子，并且已经在实验中实现了。
We show that Floquet engineering with circularly polarized light (CPL) can selectively split the valley degeneracy of a twisted multilayer graphene (TMG), and thus generate a controlled valley-polarized Floquet Chern flat band with tunable large Chern number. It offers a feasible optical way to manipulate the valley degree of freedom in moiré flat bands, and hence opens new opportunities to study the valleytronics of morié flat band systems. We thus expect that many of the valley-related properties of TMG, e.g. orbital ferromagnetism, can be switched by CPL with proper doping. We reveal a Chern number hierarchy rule for the Floquet flat bands in a generic (M+N)-layer TMG. We also illustrate that the CPL effects on TMG strongly rely on the stacking chirality, which is an unique feature of TMG. All these phenomena could be tested in the twisted double bilayer graphene systems, which is the simplest example of TMG and has already been realized in experiment.
