论文标题
两种对称和高电流状态的自上而下的可重新配置FET
Top-down fabricated reconfigurable FET with two symmetric and high-current on-states
论文作者
论文摘要
我们展示了基于硅纳米线的自上而下的可重构场效应晶体管（RFET），该硅可以通过静电编程为p和n-cONFIGURATION。与其他自上而下的RFET相比，该设备将转移特性的高对称性，配置的高/OFF电流比率高。在电线内形成了两个Nisi2/Si Schottky连接，并单独地门控。狭窄的欧米茄门控通道是通过重复的SiO2蚀刻和生长序列和共形锡沉积来制造的。在绝对情况下，闸门和肖特基接触金属的工作功能以及氧化物诱导的对肖特基连接的压缩应力的调整仅导致p-与n电流的p-仅比n电流高1.6，绝对是相同的栅极电压和相同的排水电压。
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.
