论文标题
单层INSE中的电荷密度波和超导阶段
Charge density wave and superconducting phase in monolayer InSe
论文作者
论文摘要
在本文中，使用孔和电子掺杂系统的第一原理计算确定了单层硒化中可能的超导阶段的完整研究。费米表面的孔掺杂依赖性对于单层Inse至关重要。它通过增加孔密度，从六个分离的口袋到两个口袋，从而导致费米表面从六个分离的口袋进行了广泛的修饰。对于系统的低洞掺杂水平，在Lifshitz过渡点以下，超导临界温度$ T_C \ SIM 55-75 $ K在各向异性的Eliashberg理论中获得，这取决于库仑电位的不同量从0.2到0.1。但是，对于在Lifshitz过渡点上方掺杂的某个孔中，裸敏感性和强电子 - phonon相互作用的温度依赖性的组合会导致电荷密度波在远高于相应$ T_C $的温度下出现的电荷密度波。包括非绝热效应后，我们可以仔细分析系统中超导或电荷密度波相发生的条件。此外，通过在室温下为不同载体浓度包含非绝热效应，单层INSE变得动态稳定。
In this paper, the completed investigation of a possible superconducting phase in monolayer indium selenide is determined using first-principles calculations for both the hole and electron doping systems. The hole-doped dependence of the Fermi surface is exclusively fundamental for monolayer InSe. It leads to the extensive modification of the Fermi surface from six separated pockets to two pockets by increasing the hole densities. For low hole doping levels of the system, below the Lifshitz transition point, superconductive critical temperatures $T_c \sim 55-75$ K are obtained within anisotropic Eliashberg theory depending on varying amounts of the Coulomb potential from 0.2 to 0.1. However, for some hole doping above the Lifshitz transition point, the combination of the temperature dependence of the bare susceptibility and the strong electron-phonon interaction gives rise to a charge density wave that emerged at a temperature far above the corresponding $T_c$. Having included non-adiabatic effects, we could carefully analyze conditions for which either a superconductive or charge density wave phase occurs in the system. In addition, monolayer InSe becomes dynamically stable by including non-adiabatic effects for different carrier concentrations at room temperature.
