论文标题
增益带宽产品增强的光电探测器的路线图
Roadmap for Gain-Bandwidth-Product Enhanced Photodetectors
论文作者
论文摘要
光电探测器是执行基本光学信号转换的关键光电构建块,与太阳能电池不同,以特定的波长和高信号或感觉速度运行。然而,为了实现高探测器性能,设备物理学将可获得的检测器灵敏度的基本限制(例如响应性和增益)同时旨在增加探测器的时间响应,即速度(称为增益带宽产品(GBP))。尽管近年来检测器GBP一直在增加,但平均GBP仍然相对适度(〜10^6-10^7 Hz-A/W)。在这里,我们讨论了基于比例长度理论的参数,讨论了光载体通道长度,迁移率和光波导模式的电阻的参数。我们表明,短通道检测器与插槽波导方法协同作用,并且在合并后提供了高度的探测器设计协同作用,尤其是对于纳米含量薄的材料。实际上,我们发现两个基于材料的检测器不受其低迁移率的限制,并且原则上可以允许100 GHz快速响应率。但是,接触电阻仍然是这种薄材料的挑战,这是一个尚未解决的研究主题。一个临时解决方案是利用异质结的方法进行功能分离。尽管如此,基于下一代缩放长度理论的检测器中使用的原子和纳米薄的材料也要求高材料质量和单片整合策略纳入光子电路,包括铸造型固定过程。就目前而言,这封信旨在指导社区,如果达到下一代光电探测器,旨在实现GBP = 10^12 Hz-a/w的性能目标。
Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high detector performance, device physics, however, places a fundamental limit of the achievable detector sensitivity, such as responsivity and gain, when simultaneously aimed to increasing the detectors temporal response, speed, known as the gain-bandwidth product (GBP). While detectors GBP has been increasing in recent years, the average GBP is still relatively modest (~10^6-10^7 Hz-A/W). Here we discuss photodetector performance limits and opportunities based on arguments from scaling length theory relating photocarrier channel length, mobility, electrical resistance with optical waveguide mode constrains. We show that short-channel detectors are synergistic with slot-waveguide approaches, and when combined, offer a high-degree of detector design synergy especially for the class of nanometer-thin materials. Indeed, we find that two dimensional material-based detectors are not limited by their low mobility and can, in principle, allow for 100 GHz fast response rates. However, contact resistance is still a challenge for such thin materials, a research topic that is still not addressed yet. An interim solution is to utilize heterojunction approaches for functionality separation. Nonetheless, atomistically- and nanometer-thin materials used in such next-generation scaling length theory based detectors also demand high material quality and monolithic integration strategies into photonic circuits including foundry-near processes. As it stands, this letter aims to guide the community if achieving the next generation photodetectors aiming for a performance target of GBP = 10^12 Hz-A/W.