论文标题
$β$ -GA $ _2 $ o $ $ _3 $ schottky屏障二极管带有P型III-nitride Guard Ring，以增强故障
Design of a $β$-Ga$_2$O$_3$ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown
论文作者
论文摘要
这项工作介绍了一种新颖的GA $ _2 $ o $ _3 $垂直Schottky二极管的静电分析，该二极管具有三种不同的防护环配置，以减少金属边缘的峰值电场。模拟并分析了高度掺杂的P型GAN，P型非极性Algan和极化掺杂分级的P-Algan，并分析为防护环材料，该材料与GA $ _2 $ o $ _3 $漂移层形成异质结。带有非极性分级的P-Algan的防护戒指，带有大于ga $ _2 $ o $ $ _3 $的带隙，在筛选金属边缘的电场方面表现出最佳性能。还与报道的GA $ _2 $ o $ _3 $ schottky二极管和没有防护戒指的结构和具有高电阻氮掺杂的后卫环的结构进行了比较。预计优化的设计的故障电压高达5.3 kV，并且特定的抗性为3.55 m $ω$ -CM $^2 $，这会导致出色的功率数字为7.91 GW/cm $ $^2 $。
This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN and polarization doped graded p-AlGaN are simulated and analyzed as the guard ring material, which forms a heterojunction with the Ga$_2$O$_3$ drift layer. Guard ring with non-polar graded p-AlGaN with a bandgap larger than Ga$_2$O$_3$ is found to show the best performance in terms of screening the electric field at the metal edges. The proposed guard ring configuration is also compared with a reported Ga$_2$O$_3$ Schottky diode with no guard ring and a structure with a high resistive Nitrogen-doped guard ring. The optimized design is predicted to have breakdown voltage as high as 5.3 kV and a specific on-resistance of 3.55 m$Ω$-cm$^2$ which leads to an excellent power figure of merit of 7.91 GW/cm$^2$.
