论文标题

由于界面处的密度过渡层而导致的Richtmyer-Meshkov不稳定性抑制

Suppression of the Richtmyer-Meshkov Instability due to a Density Transition Layer at the Interface

论文作者

Sano, Takayoshi, Ishigure, Kazuki, Cobos-Campos, Fransisco

论文摘要

我们已经通过流体动力学模拟了Richtmyer-Meshkov不稳定性(RMI)的生长,研究了平滑过渡层对抑制不稳定性的经验条件。当厚度$ l $比接口调制$λ$的波长窄时,对RMI的影响很小。但是,如果过渡层比$λ$更宽,则与RMI相关的扰动速度将大大降低。抑制条件被解释为通过过渡层的冲击传输时间比调制波长的声音交叉时间更长的情况。波动的动能降低为$ l^{ - p} $,$ p = 2.5 $,这表明RMI的生长速度通过过渡层的存在成比例降低至$ l^{ - p/2} $。发现此功能非常通用,并且出现在各种冲击接口相互作用中。

We have investigated the effects of a smooth transition layer at the contact discontinuity on the growth of the Richtmyer-Meshkov instability (RMI) by hydrodynamic numerical simulations and derived an empirical condition for the suppression of the instability. The transition layer has little influence on the RMI when the thickness $L$ is narrower than the wavelength of an interface modulation $λ$. However, if the transition layer becomes broader than $λ$, the perturbed velocity associated with the RMI is reduced considerably. The suppression condition is interpreted as the cases that the shock transit time through the transition layer is longer than the sound crossing time of the modulation wavelength. The fluctuation kinetic energy decreases as $L^{-p}$ with $p = 2.5$, which indicates that the growth velocity of the RMI decreases in proportion to $L^{-p/2}$ by the presence of the transition layer. This feature is found to be quite universal and appeared in a wide range of shock-interface interactions.

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